IXSH15N120AU1 Datasheet, PDF (1/2 Pages) IXYS Corporation – IGBT with Diode

IGBT with Diode
"S" Series - Improved SCSOA Capability
C
G
IXSH15N120AU1
PRELIMINARY DATA SHEET
I_C25 = 30 A
V_CES = 1200 V
V_CE(sat) = 4.0 V
E
Symbol
Test Conditions
Maximum Ratings
TO-247AD
V_CES
V
CGR
V
GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
t_sc
P_C
T_J
T_JM
T_STG
M
d
Weight
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MΩ
Continuous
Transient
1200
V
1200
V
±20
V
±30
V
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_J = 125°C, R_G = 82 Ω
Clamped inductive load, L = 100 µH
30
A
15
A
60
A
I_CM = 30
A
@ 0.8 V_CES
T_J = 125ºC, V_CE = 720 V; V_GE = 15V, R_G = 82Ω
5
µs
T_C = 25°C
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Mounting torque
.
1.15/10 Nm/lb-in.
6
g
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)
300
°C
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV
CES
V_GE(th)
I_CES
I_GES
I = 4.0 mA, V = 0 V
C
GE
I_C = 1.5 mA, V_CE = V_GE
V_CE = 0.8 V_CES , V_GE= 0 V
Note 2
V_CE = 0 V, V_GE = ±20 V
T_J = 25°C
T_J = 125°C
V_CE(sat)
I_C = I_C90, V_GE = 15 V
Characteristic Values
Min. Typ. Max.
1200
4
V
8V
500 µA
8 mA
+ 100 nA
4.0 V
C
G
E
Features
• High frequency IGBT with guaranteed
Short Circuit SOA capability.
• IGBT with anti-parallel diode in one
package
• 2^nd generation HDMOS^TM process
Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies
(UPS)
• Switched-mode and resonant-mode
power supplies
• DC choppers
Advantages
• Saves space (two devices in one
package)
• Easy to mount (isolated mounting hole)
• Reduces assembly time and cost
• Operates cooler
• Easier to assemble
© 1994 IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street; Santa Clara, CA 95054
Tel: [phone]; Fax: [phone]
94522B(6/95)
IXYS Semiconductor GmbH
POB 1180; D-68619; Lampertheim, Germany
Tel: [phone]; Fax: [phone]