IXSH10N120AU1 Datasheet, PDF (1/2 Pages) IXYS Corporation – IGBT with Diode

PRELIMINARY DATA SHEET
IGBT with Diode
"S" Series - Improved SCSOA Capability
IXSH10N120AU1
I_C25 = 20 A
V_CES = 1200 V
V_CE(sat) = 4.0 V
C
Symbol
Test Conditions
Maximum Ratings
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I
CM
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T = 25°C, 1 ms
C
1200
V
1200
V
±20
V
±30
V
20
A
10
A
40
A
G
E
TO-247AD
SSOA
V=
GE
15
V,
T
J
=
125°C,
R=
G
150
Ω
I = 20
A
CM
(RBSOA) Clamped inductive load, L = 300 µH
@ 0.8 V_CES
G
CE
t_sc
T_J = 125ºC, V_CE = 720 V; V_GE = 15V, R_G = 150Ω
5
µs _Features
P_C
T_C = 25°C
T_J
T_JM
T_STG
M_d
Weight
Mounting torque
.
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)
100
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.15/10 Nm/lb-in.
6
g
300
°C
• Hig•h voltage IGBT with
guaranteed short circuit SOA capability.
• IGBT with anti-parallel diode in one
package
• 2^nd generation HDMOS^TM process
Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV _CES
I_C = 3.25 mA, V_GE = 0 V
V
GE(th)
I
C
=
750
µA,
V
CE
=
V
GE
I_CES
V_CE = 0.8 V_CES ,V_GE= 0 V
Note 2
I_GES
V
CE(sat)
V_CE = 0 V, V_GE = ±20 V
I = I , V = 15 V
C
C90 GE
©1996 IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street; Santa Clara, CA 95054
Tel: [phone]; Fax: [phone]
T_J = 25°C
T_J = 125°C
Characteristic Values
Min. Typ. Max.
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• DC choppers
1200
V Advantages
4
8
• ^V
Saves space (two devices in one
400
5
µA
mA
package
• Easy to mount(isolated mounting
hole)
+ 100
nA
• Reduces assembly time and cost
• Runs cooler than equivalent
4.0 V
6-pack IGBTs
• Easier to package to meet UL
requirements
94523C (1/96)
IXYS Semiconductor GmbH
Edisonstr.15, D-68623 Lampertheim, Germany
Phone: [phone] Fax: [phone]