IXSA16N60 Datasheet, PDF (1/2 Pages) IXYS Corporation – Low V CE(sat) IGBT - Short Circuit SOA Capability

Preliminary Data Sheet
Low V_CE(sat) IGBT
Short Circuit SOA Capability
IXSA 16N60
IXSP 16N60
V
CES
= 600V
I_C25
= 16A
V_CE(sat)typ = 1.8V
Symbol
Test Conditions
Maximum Ratings TO-220AB(IXSP)
V_CES
V
CGR
V_GES
V_GEM
I_C25
I_C90
I
CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T
C
= 25°C, 1 ms
V_GE= 15 V, T_J = 125°C, R_G = 150 Ω
Clamped inductive load, L = 300 µH
t_SC
(SCSOA)
P
C
T_J
T
JM
T_stg
Weight
V_GE= 15 V, V_CE = 360 V, T_J = 125°C
R_G = 82 Ω, non repetitive
T
C
= 25°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
600
V
600
V
± 20
V
± 30
V
32
A
16
A
52
A
I_CM = 32
A
@ 0.8 V_CES
5
µs
100
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2
g
300
°C
260
°C
Symbol
BV_CES
V
GE(th)
I
CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 250 µA, V_GE = 0 V
I
C
=
750
µA,
V
CE
=
V
GE
V = 0.8 • V
CE
CES
V_GE = 0 V
V_CE = 0 V, V_GE = ± 20 V
I_C = I_C90, V_GE = 15 V
T
J
=
25°C
T_J = 125°C
600
V
3.5
6.5 V
200 µA
1 mA
± 100 nA
1.8 2.3 V
GCE
TO-263AA
G = Gate,
E = Emitter,
G
E
TAB
C = Collector,
TAB = Collector
Features
l _{International standard package}
l _{Guaranteed Short Circuit SOA}
capability
l _{Low VCE(sat)}
- for low on-state conduction losses
l _{High current handling capability}
l _{MOS Gate turn-on}
- drive simplicity
l _{Fast fall time for switching speeds}
up to 20 kHz
Applications
l _{AC motor speed control}
l _{Uninterruptible power supplies (UPS)}
l _Welding
Advantages
l _{High power density}
© 1997 IXYS All rights reserved
96539A (05/97)