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| IXKR25N80C Datasheet, PDF (1/2 Pages) IXYS Corporation – Advanced Technical Information CoolMOS Power MOSFETin ISOPLUS247 Package | |||
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Advanced Technical Information
IXKR 25N80C
CoolMOS⢠1) Power MOSFET
in ISOPLUS247⢠Package
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Package with Electrically Isolated Base
D
G
S
ID25 = 25 A
VDSS = 800 V
RDS(on) = 125 mW
ISOPLUS 247â¢
E153432
G
D
S
G = Gate, D = Drain, S = Source
MOSFET
Symbol
VDSS
VGS
ID25
ID90
dv/dt
EAS
EAR
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VDS < VDSS; IF < 17 A | diF /dt | < 100 A/µs
TVJ = 150°C
ID = 4 A; L = 80 mH; TC = 25°C
ID = 17 A; L = 3.3 mH; TC = 25°C
Maximum Ratings
800 V
± 20 V
25 A
18 A
6 V/ns
0.67 mJ
0.5 mJ
Symbol
RDSon
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VF
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = ID90
VDS = 20 V; ID = 2 mA
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
VGS = ± 20 V; VDS = 0 V
VGS = 10 V; VDS = 640 V; ID = 34 A
VGS = 10 V; VDS = 640 V
ID = 34 A; RG = 2.2 â¦
(reverse conduction) IF = 12.5 A; VGS = 0 V
125
2
100
180
24
92
25
15
72
6
1
150 mW
4
V
50 µA
µA
200 nA
355 nC
nC
nC
ns
ns
ns
ns
1.3
V
0.5 K/W
Features
⢠ISOPLUS247⢠package with DCB Base
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- JEDEC TO-247AD compatible
- Easy clip assembly
⢠fast CoolMOS⢠1) power MOSFET
3rd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
⢠Enhanced total power density
Applications
⢠Switched mode power supplies (SMPS)
⢠Uninterruptible power supplies (UPS)
⢠Power factor correction (PFC)
⢠Welding
⢠Inductive heating
1) CoolMOS⢠is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080526a
-2
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