IXKN45N80C Datasheet, PDF (1/2 Pages) IXYS Corporation – CoolMOS Power MOSFET

Advanced Technical Information
CoolMOS Power MOSFET
N-Channel Enhancement Mode
Low R_DSon, High V_DSS MOSFET
IXKN 45N80C
V_DSS
800 V
I_D25
44 A
R_DS(on)
74 mΩ
MOSFET
Symbol
V_DSS
V_GS
I_D25
I_D90
dv/dt
E_AS
E_AR
Conditions
T_VJ = 25°C to 150°C
T_C = 25°C
T_C = 90°C
V_DS < V_DSS; I_F ≤ 17 A;di_F/dt≤ 100 A/µs
T_VJ = 150°C
I_D = 4 A; L = 80 mH; T_C = 25°C
I_D = 17 A; L = 3 µH; T_C = 25°C
Maximum Ratings
800
V
±20
V
44
A
30
A
6 V/ns
670
mJ
0.5
mJ
miniBLOC, SOT-227 B
E72873
S
G
S
D
G = Gate
S = Source
D = Drain
Either source terminal at miniBLOC can be used
as main or kelvin source
Symbol
R_DSon
V_GSth
I_DSS
I_GSS
Q_g
Q
gs
Q_gd
t_d(on)
t
r
t_d(off)
t
f
V_F
R_thJC
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 10 V; I_D = I_D90
V
DS
=
20
V;
I_D
=
4
mA;
V_DS = V_DSS; V_GS = 0 V; T_VJ = 25°C
T_VJ = 125°C
V_GS = ±20 V; V_DS = 0 V
V = 10 V; V = 640 V; I = 70 A
GS
DS
D
63 74 mΩ
2
4V
50 µA
20
µA
400 nA
332
nC
36
nC
168
nC
V_GS= 10 V; V_DS = 640 V;
I
D
=
70
A;
R
G
=
1.8
Ω
25
ns
15
ns
75
ns
10
ns
(reverse
conduction)
I
F
=
37.5
A;
V_GS
=
0
V
1.0 1.2 V
0.33 K/W
Features
● _{miniBLOC package}
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- International standard package SOT-227
- Easy screw assembly
● _{fast CoolMOS power MOSFET - 3}rd _generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
● _{Enhanced total power density}
Applications
● _{Switched mode power supplies (SMPS)}
● _{Uninterruptible power supplies (UPS)}
● _{Power factor correction (PFC)}
● _Welding
● _{Inductive heating}
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
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