IXKN40N60 Datasheet, PDF (1/2 Pages) IXYS Corporation – CoolMOS Power MOSFET

Advanced Technical Information
CoolMOS Power MOSFET
N-Channel Enhancement Mode
Low R_DSon, High V_DSS MOSFET
IXKN 40N60C
V_DSS
600 V
I_D25
40 A
R_DS(on)
70 mW
Symbol
V_DSS
V_GS
I_D25
I_D90
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
V_ISOL
M_d
MOSFET
Symbol
V_DSS
I_DSS
R_DS(on)
V_GS(th)
I_GSS
Conditions
Maximum Ratings
T_J = 25°C to 150°C
600
V
±20
V
T_C = 25°C
40
T_C = 90°C
27
I_D = 20 A, L = 5 µH, T_VJ = 25°C, repetitive
1
I_D = 10 A, L = 36 mH, T_VJ = 25°C, non repetitive
1.8
V_DS £ V_DSS, I_S = 47 A, di_S/dt = 100 A/µs, T_J = T_JM
6
T_C = 25°C
290
-40 ... +150
150
-40 ... +150
A
A
mJ
J
V/ns
W
°C
°C
°C
50/60 Hz, RMS I_ISOL £ 1 mA
Mounting torque
Terminal connetion torque (M4)
2500
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Conditions
V_GS = 0 V, I_D = 1 mA
V_DS = 0.8 • V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
V_DS = V_GS, I_D = 2.5 mA
V_GS = ±20 V_DC, V_DS = 0
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
T_J = 25°C
0.5
T_J = 125°C
50
3.5
V
25 µA
µA
70 mW
5.5 V
±100 nA
miniBLOC, SOT-227 B
E72873
S
G
S
D
G = Gate
S = Source
D = Drain
Either source terminal at miniBLOC can be used
as main or kelvin source
Features
q _{miniBLOC package}
- Electrically isolated copper base
- Low coupling capacitance to the heatsink for
reduced EMI
- High power dissipation due to AlN
ceramic substrate
- International standard package SOT-227
- Easy screw assembly
q _{Fast CoolMOS power MOSFET}
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
q _{Enhanced total power density}
Applications
q _{Switched mode power supplies (SMPS)}
q _{Uninterruptible power supplies (UPS)}
q _{Power factor correction (PFC)}
q _Welding
q _{Inductive heating}
CoolMOS is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-2