IXKK85N60C Datasheet, PDF (1/4 Pages) IXYS Corporation – CoolMOSTM Superjunction MOSFET

Power MOSFET
CoolMOS^TM Superjunction
MOSFET
Low R_DS(on), High Voltage
IXKK85N60C
D
G
S
V_DSS =
I_D25 =
≤ R_DS(on)
600V
85A
36mΩ
TO-264
Symbol
V_DSS
V_GSS
V_GSM
I_D25
I_D100
I_AS
E_AS
dv/dt
T_J
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C
Continuous
Transient
T_C = 25°C
T_C = 100°C
T_C = 25°C, I_D = 10A
T_C = 25°C, I_D = 20A
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GS(th)
V_DS = V_GS, I_D = 5.4mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 55A, Note 1
Maximum Ratings
600
V
±20
V
±30
V
85
A
55
A
1.8
J
1
mJ
50
-55 ... +150
-55 ... +150
300
260
1.13/10
10
V/ns
°C
°C
°C
°C
Nm/lb.in.
g
Characteristic Values
Min. Typ. Max.
2.0
4.0 V
±200 nA
50 μA
500 μA
30
36 mΩ
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z 3^RD Generation CoolMOS Power MOSFET
- High Blocking Capability
- Low on Resistance
- Avalanche Rated
z Low Thermal Resistance Due to Reduced
Chip Thickness
Applications
z Switch-Mode Power-Supplies
z Uninterruptible Power Supplies
z Power Factor Correction
z Welding
z Inductive Heating
© 2012 IXYS CORPORATION, All Rights Reserved
DS99065C(11/12)