 English |
|
|
|
|
|
|
|
| IXKH47N60C Datasheet, PDF (1/4 Pages) IXYS Corporation – CoolMOS™ 1) Power MOSFET | |||
| |||
|
IXKH 47N60C
CoolMOS⢠1) Power MOSFET
Low RDSon, high VDSS
Superjunction MOSFET
D
G
S
VDSS
= 600 V
ID25
= 47 A
R = DS(on) max 70 mΩ
TO-247
G
q
D
tab
S
E72873
MOSFET
Symbol
VDSS
VGS
ID25
ID100
EAS
EAR
dV/dt
Conditions
TVJ = 25°C
TC = 25°C
TC = 100°C
single pulse ID = 10 A; TC = 25°C
repetitive ID = 20 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings
600 V
± 20
V
47 A
30 A
1800
tbd
tbd
mJ
mJ
V/ns
Symbol Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise speciï¬ed)
min. typ. max.
RDSon
VGS = 10 V; ID = ID100 c
60 70 mΩ
VGS(th)
VDS = VGS; ID = 2 mA
2
IDSS
VDS = VDSS; VGS = 0 V
TVJ = 25°C
TVJ = 150°C
IGSS
VGS = ± 20 V; VDS = 0 V
4
V
25 µA
250 µA
±100 nA
Ciss
Coss
VGS = 0 V; VDS = 100 V
f = 1 MHz
Qg
Qgs
VGS = 0 to 10 V; VDS = 350 V; ID = 40 A
Qgd
td(on)
tr
td(off)
tf
VGS = 10 V; VDS = 380 V
ID = 47 A; RG = 4.7 Ω
RthJC
c Pulse test, t < 300 µs, duty cycle d < 2%
tbd
pF
tbd
pF
255 650 nC
30
nC
110
nC
20
ns
27
ns
111
ns
10
ns
0.3 K/W
Features
⢠3rd generation Superjunction power
MOSFET
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
Applications
⢠Switched mode power supplies (SMPS)
⢠Uninterruptible power supplies (UPS)
⢠Power factor correction (PFC)
⢠Welding
⢠Inductive heating
1) CoolMOS⢠is a trademark of
Inï¬neon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080523a
1-4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese