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| IXKH24N60C5 Datasheet, PDF (1/4 Pages) IXYS Corporation – N-Channel Enhancement Mode | |||
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IXKH 24N60C5
IXKP 24N60C5
CoolMOS⢠1) Power MOSFET
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
Preliminary data
ID25
= 24 A
VDSS
= 600 V
RDS(on) max = 0.165 Ω
D
TO-247 AD (IXKH)
G
S
G
D
S
TO-220 AB (IXKP)
q D(TAB)
MOSFET
Symbol
VDSS
VGS
ID25
ID90
EAS
EAR
dV/dt
Conditions
TVJ = 25°C
TC = 25°C
TC = 90°C
single pulse
repetitive
ID = 7.9 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings
600 V
± 20 V
24 A
16 A
522 mJ
0.79 mJ
50 V/ns
Symbol
RDSon
VGS(th)
IDSS
IGSS
Ciss
Coss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise speciï¬ed)
min. typ. max.
VGS = 10 V; ID = 12 A
VDS = VGS; ID = 0.79 mA
VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
VGS = 0 V; VDS = 100 V
f = 1 MHz
TVJ = 25°C
TVJ = 125°C
VGS = 0 to 10 V; VDS = 400 V; ID = 12 A
VGS = 10 V; VDS = 400 V
ID = 12 A; RG = 3.3 Ω
150
2.5
3
10
2000
100
40
9
13
12
5
50
5
165 mΩ
3.5
V
1 µA
µA
100 nA
pF
pF
52 nC
nC
nC
ns
ns
ns
ns
0.5 K/W
G
D
S
Features
⢠fast CoolMOS⢠1) power MOSFET
- 4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
⢠Enhanced total power density
Applications
⢠Switched mode power supplies
(SMPS)
⢠Uninterruptible power supplies (UPS)
⢠Power factor correction (PFC)
⢠Welding
⢠Inductive heating
⢠PDP and LCD adapter
1) CoolMOS⢠is a trademark of
Inï¬neon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080523c
1-4
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