IXKH20N60C5 Datasheet, PDF (1/4 Pages) IXYS Corporation – CoolMOS™ 1) Power MOSFET

IXKH 20N60C5
IXKP 20N60C5
CoolMOS^{™ 1)} Power MOSFET
N-Channel Enhancement Mode
Low R_DSon, High V_DSS MOSFET
Ultra low gate charge
I_D25
= 20 A
V_DSS
= 600 V
R = _{DS(on) max} 0.2 Ω
D
TO-247 AD (IXKH)
G
S
G
D
S
TO-220 AB (IXKP)
q D(TAB)
MOSFET
Symbol
V_DSS
V_GS
I_D25
I_D90
E_AS
E_AR
dV/dt
Conditions
T_VJ = 25°C
T_C = 25°C
T_C = 90°C
single pulse
repetitive
I_D = 6.6 A; T_C = 25°C
MOSFET dV/dt ruggedness V_DS = 0...480 V
Maximum Ratings
600 V
± 20 V
20 A
13 A
435 mJ
0.66 mJ
50 V/ns
Symbol
R_DSon
V_GS(th)
I_DSS
I_GSS
C_iss
C_oss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
R_thJC
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 10 V; I_D = 10 A
V_DS = V_GS; I_D = 1.1 mA
V_DS = 600 V; V_GS = 0 V
V_GS = ± 20 V; V_DS = 0 V
V_GS = 0 V; V_DS = 100 V
f = 1 MHz
T_VJ = 25°C
T_VJ = 125°C
V_GS = 0 to 10 V; V_DS = 400 V; I_D = 10 A
V_GS = 10 V; V_DS = 400 V
I_D = 10 A; R_G = 3.3 Ω
180
2.5
3
10
1520
72
32
8
11
10
5
50
5
200 mΩ
3.5
V
1 µA
µA
100 nA
pF
pF
45 nC
nC
nC
ns
ns
ns
ns
0.60 K/W
G
D
S
Features
• fast CoolMOS^{™ 1)} power MOSFET
- 4th generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
1) _CoolMOS™ _{is a trademark of}
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080523d
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