IXKG25N80C Datasheet, PDF (1/2 Pages) IXYS Corporation – CoolMOS Power MOSFET ISO264

ADVANCE TECHNICAL INFORMATION
CoolMOS^TM Power MOSFET ^{IXKG 25N80C}
ISO264^TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low R_DS(on), High Voltage MOSFET
V_DSS
I_D25
R_DS(on)
= 800 V
= 25 A
= 150 mΩ
Symbol
Test Conditions
V_DSS
V_GS
I_D25
I_D90
I_D(RMS)
E_AS
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
M_d
Weight
T_J = 25°C to 150°C
Continuous
T_C = 25°C
T_C = 90°C
Package lead current limit
I_o
I_o
=
=
10A,
20A
T_C
=
25°C
V_DS < V_DSS,
d_IR/dt = 100
I_{AF /}≤µ_s17
A,
T_VJ
=
150°C
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting torque
Maximum Ratings
800
V
±20
V
25
A
9
A
45
A
690
mJ
0.5
mJ
6
V/ns
ISO264^TM
G
D
S
G = Gate,
S = Source
D = Drain,
* Patent pending
(TAB)
250
W
-55 ... +150
°C
150
°C
-55 ... +125
°C
300
°C
2500
V~
0.9 / 6 Nm/lb-in
8
g
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z 3^RD generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
z Low thermal resistance due to reduced
chip thickness
z Low drain to tab capacitance(<40pF)
Symbol
R_DS(on)
V_GS(th)
I_DSS
I_GSS
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 10 V, I_D = I_D90, Note 1
V_GS = 10 V, I_D = I_D90, Note 1 T_J = 125°C
126 150 mΩ
297
mΩ
Applications
z Switched Mode Power Supplies (SMPS)
z Uninterruptible Power Supplies (UPS)
z Power Factor Correction (PFC)
z Welding
z Inductive Heating
V_DS = V_GS, I_D = 2 mA
V_DS = V_DSS
V_GS = 0 V
V_GS = ±20 V_DC, V_DS = 0
T_J = 25°C
T_J = 125°C
2
4V
Advantages
50 µA
10
µA ^{z Easy assembly}
z Space savings
±200 nA ^{z High power density}
© 2003 IXYS All rights reserved
CoolMOS is a trademark of Infineon
Technology.
DS99099(10/03)