IXKC40N60C Datasheet, PDF (1/2 Pages) IXYS Corporation – CoolMOS Power MOSFET ISOPLUS220

ADVANCE TECHNICAL INFORMATION
CoolMOS Power MOSFET
ISOPLUS220^TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low R_DS(on), High Voltage,_, MOSFET
IXKC 40N60C
V_DSS
I_D25
R_DS(on)
= 600 V
= 28 A
= 96 mΩ
Symbol
Test Conditions
Maximum Ratings _{ISOPLUS 220}^TM
V_DSS
V_GS
I_D25
I
D90
I_D(RMS)
E_AS
E_AR
P_D
T
J
T
JM
T_stg
T_L
V_ISOL
F_C
Weight
T
J
= 25°C to 150°C
Continuous
T_C = 25°C; Note 1
T_C = 90°C, Note 1
Package lead current limit
I_o = 10A, T_C = 25°C
I = 20A
o
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
600
V
±20
V
28
A
19
A
45
A
690
mJ
1
mJ
250
W
-55 ... +150
°C
150
°C
-55 ... +125
°C
300
°C
2500
V~
11 ... 65 / 2.4 ...11 N/lb
3
g
G
D
S
G = Gate,
S = Source
Isolated back surface*
D = Drain,
* Patent pending
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l 2^ND generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
l Low thermal resistance due to reduced
chip thickness
l Low drain to tab capacitance(<30pF)
Symbol
R_DS(on)
V_GS(th)
I_DSS
I
GSS
Applications
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 10 V, I_D = I_D90, Note 3
V_GS = 10 V, I_D = I_D90, Note 3 T_J = 125°C
80
96 mΩ
230
mΩ
l Switched Mode Power Supplies (SMPS)
l Uninterruptible Power Supplies (UPS)
l Power Factor Correction (PFC)
l Welding
l Inductive Heating
V_DS = V_GS, I_D = 2 mA
3.5
5.5 V ^Advantages
V_DS = V_DSS
V_GS = 0 V
V_GS = ±20 V_DC, V_DS = 0
T_J = 25°C
T_J = 125°C
2 µA ^{l Easy assembly: no screws or isolation}
20
µA
foils required
l Space savings
±200 nA ^{l High power density}
© 2001 IXYS All rights reserved
COOLMOS is a trademark of Infineon
Technolgy
98847 (6/01)