IXKC25N80C Datasheet, PDF (1/4 Pages) IXYS Corporation – N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface

IXKC 25N80C
CoolMOS^{™ 1)} Power MOSFET
ISOPLUS^TM Package
N-Channel Enhancement Mode
Low R_DSon, high V_DSS MOSFET
Electrically Isolated Back Surface
D
G
S
I_D25
= 25 A
V_DSS
= 800 V
R_{DS(on) max} = 150 mΩ
ISOPLUS220
G
D
S
E72873
q
isolated
back surface
MOSFET
Symbol
V_DSS
V_GS
I_D25
I_D90
E_AS
E_AR
dV/dt
Conditions
T_VJ = 25°C
T_C = 25°C
T_C = 90°C
T_{J start} = 25°C; single pulse; I_D = 3.4 A
T_{J start} = 25°C; repetitive; I_D = 17 A
V_DS < V_DSS; I_F = 35 A; T_VJ = 150°C
d_IR /dt = 100 A/µs
Maximum Ratings
800 V
± 20 V
25 A
18 A
670 mJ
0.5 mJ
6 V/ns
Symbol
R_DSon
V_GS(th)
I_DSS
I_GSS
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
R_thJC
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 10 V; I_D = I_D90
V_DS = V_GS; I_D = 2 mA
V_DS = V_DSS; V_GS = 0 V
V_GS = ± 20 V; V_DS = 0 V
T_VJ = 25°C
T_VJ = 125°C
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
V_GS = 0 to 10 V; V_DS = 640 V; I_D = I_D90
V_GS = 10 V; V_DS = 640 V; T_VJ = 125°C
I_D = 35 A; R_G = 2.2 Ω
135 150 mΩ
2
250
4
V
50 µA
µA
±200 nA
4600
pF
2500
pF
120
pF
180
nC
20
nC
80
nC
25
ns
25
ns
75
ns
10
ns
0.5 K/W
Features
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
• 3^rd generation CoolMOS^{™ 1)} power
MOSFET
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
• Low thermal resistance due to
reduced chip thickness
• Low drain to tab capacitance (<30 pF)
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
Advantages
• Easy assembly: no screws or isolation
foils required
• Space savings
• High power density
1) _CoolMOS™ _{is a trademark of}
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080526a
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