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IXKC23N60C5 Datasheet, PDF (1/4 Pages) IXYS Corporation – CoolMOS Power MOSFET
IXKC 23N60C5
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Ultra low gate charge
Preliminary data
D
G
S
ID25
= 23 A
VDSS
= 600 V
R = DS(on) max 0.1 Ω
ISOPLUS220TM
G
D
S
E72873

isolated back
surface
MOSFET
Symbol
VDSS
VGS
ID25
ID90
EAS
EAR
dV/dt
Conditions
TVJ = 25°C
TC = 25°C
TC = 90°C
single pulse
repetitive
ID = 11 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings
600 V
± 20
V
23 A
16 A
800 mJ
1.2 mJ
50 V/ns
Symbol
RDSon
VGS(th)
IDSS
IGSS
Ciss
Coss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = 18 A
VDS = VGS; ID = 1.2 mA
VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
VGS = 0 V; VDS = 100 V
f = 1 MHz
TVJ = 25°C
TVJ = 125°C
VGS = 0 to 10 V; VDS = 400 V; ID = 18 A
VGS = 10 V; VDS = 400 V
ID = 18 A; RG = 3.3 Ω
90
2.5
3
50
2800
130
60
14
20
10
5
60
5
100 mW
3.5
V
5 µA
µA
100 nA
pF
pF
80 nC
nC
nC
ns
ns
ns
ns
0.85 K/W
Features
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
• Fast CoolMOS™ 1) power MOSFET 4th
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
Advantages
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
1) CoolMOS™ is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
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