IXKC20N60C Datasheet, PDF (1/2 Pages) IXYS Corporation – CoolMOS Power MOSFET in ISOPLUS220 Package

CoolMOS^TM Power MOSFET ^{IXKC 20N60C}
in ISOPLUS220^TM Package
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low R_DS(on), Superjunction MOSFET
Preliminary Data Sheet
V_DSS
I_D25
R_DS(on)
= 600 V
= 14 A
= 190 mΩ
Symbol
Test Conditions
V_DSS
V_GS
I_D25
I_D90
I_D(RMS)
E_AS
E_AR
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
F_C
Weight
T_J = 25°C to 150°C
Continuous
T_C = 25°C; Note 1
T_C = 90°C, Note 1
Package lead current limit
I_o
I_o
=
=
10A,
20A
T_C
=
25°C
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
Maximum Ratings
600
V
±20
V
14
A
10
A
45
A
690
mJ
1
mJ
125
W
-55 ... +150
°C
150
°C
-55 ... +125
°C
300
°C
2500
V~
11 ... 65 / 2.4 ...11 N/lb
3
g
ISOPLUS 220LV^TM
E153432
G
DS
Isolated back surface*
G = Gate,
S = Source
D = Drain,
* Patent pending
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z 3^RD generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
z Low thermal resistance due to reduced
chip thickness
z Low drain to tab capacitance(<30pF)
Symbol
R_DS(on)
V_GS(th)
I_DSS
I_GSS
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 10 V, I_D = I_D90, Note 3
V_GS = 10 V, I_D = I_D90, Note 3 T_J = 125°C
V_DS = V_GS, I_D = 1 mA
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = ±20 V_DC, V_DS = 0
160 190 mΩ
463
mΩ
3.5
5.5 V
1 µA
10
µA
±100 nA
Applications
z Switched Mode Power Supplies (SMPS)
z Uninterruptible Power Supplies (UPS)
z Power Factor Correction (PFC)
z Welding
z Inductive Heating
Advantages
z Easy assembly: no screws or isolation
foils required
z Space savings
z High power density
© 2004 IXYS All rights reserved
CooLMOS is a trademark of Infineon
Technologies, AG
DS98848C(1/04)