IXKC13N80C Datasheet, PDF (1/2 Pages) IXYS Corporation – CoolMOS Power MOSFET ISOPLUS220

ADVANCE TECHNICAL INFORMATION
CoolMOS Power MOSFET
ISOPLUS220^TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low R_DS(on), High Voltage MOSFET
IXKC 13N80C
V_DSS
I_D25
R_DS(on)
= 800 V
= 13 A
= 290 mΩ
Symbol
Test Conditions
Maximum Ratings _{ISOPLUS 220}^TM
V_DSS
V_GS
I_D25
I_D90
I_D(RMS)
E_AS
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
F_C
Weight
T_J = 25°C to 150°C
Continuous
T_C = 25°C; Note 1
T_C = 90°C, Note 1
Package lead current limit
I_D = 4A, T_C = 25°C
I_D = 10A
V_DS < V_DSS, I_F ≤ 17 A, T_VJ = 150°C
d_S/dt = 100 A/µs
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
800
V
±20
V
13
A
G
D
9
A
S
45
A
Isolated back surface*
670
mJ
G = Gate,
S = Source
D = Drain,
0.5
mJ
6
V/ns ^{* Patent pending}
125
W
-55 ... +150
°C
150
°C
-55 ... +125
°C
300
°C
2500
V~
11 ... 65 / 2.4 ...11 N/lb
2
g
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l 3^RD generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
l Low thermal resistance due to reduced
chip thickness
l Low drain to tab capacitance(<30pF)
Symbol
R_DS(on)
V_GS(th)
I_DSS
I_GSS
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 10 V, I_D = I_D90, Note 3
V_GS = 10 V, I_D = I_D90, Note 3 T_J = 125°C
V_DS = V_GS, I_D = 1 mA
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = ±20 V_DC, V_DS = 0
250 290 mΩ
550
mΩ
2
4V
25 µA
125
µA
±100 nA
Applications
l Switched Mode Power Supplies (SMPS)
l Uninterruptible Power Supplies (UPS)
l Power Factor Correction (PFC)
l Welding
l Inductive Heating
Advantages
l Easy assembly: no screws or isolation
foils required
l Space savings
l High power density
© 2001 IXYS All rights reserved
COOLMOS is a trademark of Infineon
Technology.
98865 (11/01)