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| IXGR72N60B3H1 Datasheet, PDF (1/7 Pages) IXYS Corporation – GenX3 600VIGBT W/ Diode Electrically Isolated Tab | |||
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GenX3TM 600V IGBT
w/ Diode
IXGR72N60B3H1
(Electrically Isolated Tab)
Medium Speed Low Vsat PT IGBT
for 5-40 kHz Switching
VCES
IC110
VCE(sat)
tfi(typ)
= 600V
= 40A
ï£Â£ 1.80V
= 92ns
ISOPLUS247TM
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
FC
TL
TSOLD
Weight
Test Conditions
TJ = 25ï°C to 150ï°C
TJ = 25ï°C to 150ï°C, RGE = 1Mï
Continuous
Transient
TC = 25ï°C (Limited by Leads)
TC = 110ï°C
TC = 110ï°C
TC = 25ï°C, 1ms
VGE = 15V, TVJ = 125ï°C, RG = 3ï
Clamped Inductive Load
TC = 25ï°C
50/60 Hz, 1 Minute
Maximum Ratings
600
V
600
V
ï±20
V
ï±30
V
75
A
40
A
34
A
450
A
ICM = 240
A
VCE ï£ VCES
200
W
-55 ... +150
ï°C
150
ï°C
-55 ... +150
ï°C
2500
V~
Mounting Force
20..120/4.5..27
N/lb
Maximum Lead Temperature for Soldering
300
°C
1.6mm (0.062 in.) from Case for 10s
260
°C
5
g
G
CE
Isolated Tab
G = Gate
E = Emitter
C = Collector
Features
ï¬ Silicon Chip on Direct-Copper Bond
(DCB) Substrate
ï¬ Isolated Mounting Surface
Optimized for Low Conduction and
Switching Losses
ï¬ 2500V~ Electrical Isolation
ï¬ Square RBSOA
ï¬ Anti-Parallel Ultra Fast Diode
Advantages
ï¬ High Power Density
ï¬ Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25ï°C, Unless Otherwise Specified)
VGE(th)
IC = 250ïA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 125ï°C
Characteristic Values
Min.
Typ. Max.
3.0
5.0 V
300 ïA
5 mA
IGES
VCE = 0V, VGE = ï±20V
ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï±100 nA
VCE(sat)
IC = 60A, VGE = 15V, Note 1
IC = 120A
1.50
1.75
1.80 V
V
Applications
ï¬ Power Inverters
ï¬ UPS
ï¬ Motor Drives
ï¬ SMPS
ï¬ PFC Circuits
ï¬ Battery Chargers
ï¬ Welding Machines
ï¬ Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS99875B(7/13)
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