IXGR60N60C3C1 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

GenX3^TM 600V IGBT
w/ SiC Anti-Parallel
Diode
IXGR60N60C3C1
(Electrically Isolated Back Surface)
High Speed PT IGBT for 40-100kHz Switching
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
V_ISOL
F_C
T_L
T_SOLD
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
Maximum Ratings
600
V
600
V
±20
V
±30
V
T_C = 25°C (Limited by leads)
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 125°C, R_G = 3Ω
Clamped Inductive Load
T_C = 25°C
75
A
30
A
13
A
260
A
40
A
400
mJ
I_CM = 125
A
@ V_CE ≤ V_CES
170
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
50/60 Hz, RMS, t = 1minute
I_ISOL < 1mA
t = 10 s
Mounting Force
2500
V~
3000
V~
20..120/4.5..27
N/lb
Maximum Lead Temperature for Soldering
300
°C
1.6mm (0.062 in.) from Case for 10s
260
°C
5
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_CES
I_C = 250μA, V_CE = V_GE
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE(sat)
V_CE = 0V, V_GE = ±20V
I_C = 40A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
3.0
5.5 V
50 μA
1 mA
±100 nA
2.2
2.5 V
1.7
V
V_CES
I_C110
V_CE(sat)
t_fi(typ)
= 600V
= 30A
≤£ 2.5V
= 50ns
ISOPLUS247^TM
G
CE
Isolated Tab
G = Gate
E = Emitter
C = Collector
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{Isolated Mounting Surface}
z _{Anti-Parallel Ultra Fast Diode}
z _{High Speed Silicon Carbide Schottky}
Co-Pack Diode
- No Reverse Recovery
z _{2500V Electrical Isolation}
z _{Avalanche Rated}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2010 IXYS CORPORATION, All Rights Reserved
DS100098B(01/10)