IXGR50N60B Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFAST IGBT ISOPLUS247

HiPerFAST^TM IGBT ^{IXGR 50N60B V}_CES ^{= 600 V}
ISOPLUS247^TM
IXGR 50N60BD1 I_C25 =
(Electrically Isolated Back Surface)
V_CE(sat) =
t_fi(typ)
=
75 A
2.5 V
85 ns
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load, L = 100 µH
P_C
T_C = 25°C
T_J
T_JM
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
V_ISOL
Weight
50/60 Hz, RMS, t = 1minute leads-to-tab
(D1)
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
45
A
200
A
I_CM = 100
A
@ 0.8 V_CES
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V
5
g
Symbol
Test Conditions
V_GE(th)
I_CES
I_C = 250 µA, V_CE = V_GE
I_C = 500 µA
V_CE = 600V
V_GE = 0 V
I_GES
V_CE(sat)
V_CE = 0 V, V_GE = ±20 V
I_C = I_T, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
50N60B
2.5
50N60BD1 2.5
5.0 V
5.0 V
50N60B
50N60BD1
50N60B T_J = 125°C
50N60BD1
200 µA
650 µA
1 mA
5 mA
±100 nA
2.5 V
ISOPLUS 247
E153432
G
CE
Isolated Backside*
G = Gate,
E = Emitter
C = Collector
* Patent pending
Features
z _{DCB Isolated mounting tab}
z _{Meets TO-247AD package Outline}
z _{High current handling capability}
z _{Latest generation HDMOS}TM _process
z _{MOS Gate turn-on}
- drive simplicity
Applications
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
Advantages
z _{Easy assembly}
z _{High power density}
z _{Very fast switching speeds for high}
frequency applications
© 2004 IXYS All rights reserved
DS98730C(06/04)