IXGR40N60B2 Datasheet, PDF (1/6 Pages) IXYS Corporation – C2-Class High Speed IGBTs (Electrically Isolated Back Surface)

HiPerFAST^TM IGBT
ISOPLUS247^TM
IXGR 40N60B2
IXGR 40N60B2D1
C2-Class High Speed IGBTs
(Electrically Isolated Back Surface)
Optimized for 10-25 KHz hard switching
and up to 150 KHz resonant switching
Preliminary Data Sheet
D1
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
SSOA
(RBSOA)
P
C
T_J
T_JM
T_stg
V_ISOL
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1 ms
(IXGR40N60B2D1)
V_GE= 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load @ ≤ 600 V
T
C
= 25°C
50/60 Hz RMS, t = 1m
Maximum Ratings
600
V
600
V
±20
V
±30
V
60
A
33
A
25
A
200
A
I_CM = 80
A
167
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
6
g
Symbol
Test Conditions
V_GE(th)
I
CES
I_GES
V_CE(sat)
I_C = 250 µA, V_CE = V_GE
V =V
CE
CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = 30 A, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
3.0
5.0 V
T
J
=
25°C
T_J = 150°C
T_J = 25°C
50 µA
1 mA
±100 nA
1.9 V
V
CES
I_C25
V_CE(sat)
t
fi typ
= 600 V
= 75 A
= 1.9 V
= 82 ns
ISOPLUS247 (IXGR)
E153432
G
C
E
(ISOLATED TAB)
G = Gate,
E = Emitter
C = Collector,
Features
z _{DCB Isolated mounting tab}
z _{Meets TO-247AD package Outline}
z _{High current handling capability}
z _{Latest generation HDMOS}TM _process
z _{MOS Gate turn-on}
- drive simplicity
Applications
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
Advantages
z _{Easy assembly}
z _{High power density}
z _{Very fast switching speeds for high}
frequency applications
© 2004 IXYS All rights reserved
DS99162A(05/04)