IXGR32N60C Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFASTTM IGBT Lightspeed Series ISOPLUS247TM package(Electrically Isolated Back Side)

HiPerFAST^TM IGBT
Lightspeed Series
ISOPLUS247^TM package
(Electrically Isolated Back Side)
IXGR 32N60C
V_CE
I_C25
V_CE(sat)
t_{fi typ}
= 600 V
= 45 A
= 2.7 V
= 55 ns
Preliminary data sheet
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load, L = 100 µH
P_C
T_C = 25°C
T_J
T_JM
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
V_ISOL
Weight
50/60 Hz, RMS, t = 1minute leads-to-tab
Maximum Ratings
600
V
600
V
±20
V
±30
V
45
A
26
A
120
A
I_CM = 64
A
@ 0.8 V_CES
140
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V
6
g
ISOPLUS 247^TM
E153432
G
CE
Isolated Backside*
G = Gate,
E = Emitter
C = Collector,
*Patent pending
Features
z _{DCB Isolated mounting tab}
z _{Meets TO-247AD package Outline}
z _{High current handling capability}
z _{Latest generation HDMOS}TM _process
z _{MOS Gate turn-on}
- drive simplicity
Symbol
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250 µA, V_CE = V_GE
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
2.5
5V
V_CE = V_CES
V_GE = 0 V
T_J = 25°C
T_J = 150°C
V_CE = 600 V, V_GE = ±20 V
I_C = I_T, V_GE = 15 V (see note 1)
200 µA
1 mA
±100 nA
2.3 2.7 V
Applications
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
Advantages
z _{Easy assembly}
z _{High power density}
z _{Very fast switching speeds for high}
frequency applications
© 2004 IXYS All rights reserved
DS98651C(06/04)