IXGR32N170H1 Datasheet, PDF (1/2 Pages) IXYS Corporation – Advance Technical Information

High Voltage
IGBT with Diode
Electrically Isolated Tab
Advance Technical Information
IXGR 32N170AH1
V_CES
I_C25
V_CE(sat)
t_fi(typ)
= 1700 V
= 26 A
= 5.2 V
= 50 ns
Symbol
Test Conditions
Maximum Ratings
V_CES
V_CGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
1700
V
1700
V
V_GES
V_GEM
Continuous
Transient
±20
V
±30
V
I_C25
T_C = 25°C
I_C90
T_C = 90°C
I_F90
I_CM
T_C = 25°C, 1 ms
26
A
17
A
14
A
200
A
SSOA
(RBSOA)
V_GE = 15 V, T_VJ = 125°C, R_G = 5Ω
Clamped inductive load
I_CM = 70
A
@ 0.8 V_CES
t_SC
T_J = 125°C, V_CE = 1200 V; V_GE = 15 V, R_G = 10Ω
10
µs
P_C
T_C = 25°C
T_J
T_JM
T_stg
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
F_C
Mounting force with clamp
V_ISOL
50/60 Hz, 1 minute
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
22...130/5...30 N/lb
2500
~V
300
°C
5
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C unless otherwise specified)
min. typ. max.
I_C = 1mA, V_GE = 0 V
I_C = 250 µA, V_CE = V_GE
1700
3.0
V
5.0 V
V_CE = 0.8 • V_CES
V_GE = 0 V
Note 1 T_J = 125°C
500 µA
8 mA
V_CE = 0 V, V_GE = ±20 V
±100 nA
I_C = I_C90, V_GE = 15 V
T_J = 125°C
4.2 5.2 V
4.8
V
ISOPLUS247 (IXGR)
E153432
G
CE
ISOLATED TAB
G = Gate,
E = Emitter
C = Collector,
Features
z _{Electrically Isolated tab}
z _{High current handling capability}
z _{MOS Gate turn-on}
- drive simplicity
z _{Rugged NPT structure}
z _{Molding epoxies meet UL 94 V-0}
flammability classification
Applications
z _{Capacitor discharge & pulser circuits}
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
© 2004 IXYS All rights reserved
DS99233(11/04)