IXGR24N120C3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – High speed PT IGBTs for 20-50kHz Switching

Preliminary Technical Information
GenX3^TM 1200V IGBT IXGR24N120C3D1
High speed PT IGBTs for
20-50kHz Switching
V_CES =
I_C25 =
V_CE(sat) ≤
t_fi(typ) =
1200V
48A
4.2V
110ns
Symbol
V_CES
V
CGR
V
GES
V
GEM
I
C25
I_C100
I_CM
I_A
E
AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
F_C
T_L
T
SOLD
V_ISOL
Weight
Test Conditions
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C,
R
GE
=
1MΩ
Continuous
Transient
T
C
= 25°C
T_C = 100°C
T_C = 25°C, 1ms
T_C = 25°C
T = 25°C
C
V_GE= 15V, T_J = 125°C, R_G = 5Ω
Clamped inductive load @V_CE ≤ 1200V
T_C = 25°C
Mounting force
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
50/60 Hz RMS, t = 1min
I_ISOL < 1mA, t = 20seconds
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
48
A
24
A
96
A
20
A
250
mJ
I_CM = 48
A
200
-55 ... +150
150
-55 ... +150
20..120/4.5..27
300
260
2500
3000
5
W
°C
°C
°C
N/lb.
°C
°C
V
V
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
C
=
250μA,
V
GE
=
0V
I
C
=
250μA,
V
CE
=
V
GE
I_CES
V_CE = V_CES
V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 20A, V_GE = 15V, Note 2
T_J = 125°C
Characteristic Values
Min. Typ. Max.
1200
2.5
V
5.0 V
100 μA
1.5 mA
±100 nA
3.6 4.2 V
3.1
V
ISOPLUS 247^TM (IXGR)
G
CE
ISOLATED TAB
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• DCB Isolated mounting tab
• Meets TO-247AD package outline
• High current handling capability
• Latest generation HDMOS^TM process
• MOS Gate turn-on
-drive simplicity
• Avalanche Rated
Applications
• Switch-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC choppers
• AC motor speed control
• DC servo and robot drives
Advantages
• Space savings
• Easy assembly
• High power density
• Very fast switching speeds for high
frequency applications
© 2008 IXYS CORPORATION, All rights reserved
DS99946(02/08)