IXGR120N60B Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFASTTM IGBT ISOPLUS247TM

HiPerFAST^TM IGBT IXGR 120N60B
ISOPLUS247^TM
(Electrically Isolated Back Surface)
V=
CES
I_C25 =
= V_CE(sat)
600 V
156 A
2.1 V
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_L(RMS)
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
External lead limit
T_C = 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 2.4 Ω
Clamped inductive load
P_C
T_C = 25°C
T_J
T_JM
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
V_ISOL
Weight
50/60 Hz, RMS, t = 1minute leads-to-tab
Maximum Ratings
600
V
600
V
±20
V
±30
V
156
A
102
A
76
A
300
A
I_CM = 200
A
@ 0.8 V_CES
520
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V
5
g
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 1 mA, V_GE = 0 V
600
V
I_C = 1 mA, V_CE = V_GE
2.5
V_CE = 0.8 • V_CES
V_GE = 0 V
T_J = 25°C
T_J = 150°C
V_CE = 0 V, V_GE = ±20 V
I_C = 100A, V_GE = 15 V (see note 1)
5.5 V
200 µA
2 mA
±400 nA
2.1 V
ISOPLUS 247
E153432
G
CE
Isolated Backside*
G = Gate,
E = Emitter
C = Collector
* Patent pending
Features
z _{DCB Isolated mounting tab}
z _{Meets TO-247AD package Outline}
z _{High current handling capability}
z _{Latest generation HDMOSTM process}
z _{MOS Gate turn-on}
- drive simplicity
Applications
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
z _{AC motor speed control}
z _{DC servo and robot drives}
z _{DC choppers}
Advantages
z _{Easy assembly}
z _{High power density}
z _{Very fast switching speeds for high}
frequency applications
© 2004 IXYS All rights reserved
DS98744A(08/04)