IXGQ90N27PB Datasheet, PDF (1/5 Pages) IXYS Corporation – Preliminary Technical Information PolarTM IGBT for PDP Applications

Preliminary Technical Information
Polar^TM
IGBT
for PDP Applications
IXGQ90N27PB
V_CES =
I_CP
=
V
CE(sat)
≤
270 V
340 A
2.1 V
Symbol
V_CES
Test Conditions
T_J = 25°C to 150°C
Maximum Ratings
270
V
TO-3P
V_GEM
±30
V
I_C25
I_CPEAK
I
C(RMS)
T_C = 25°C, IGBT chip capability
T_J ≤ 150°C, tp ≤ 1 μs, D ≤ 1%
Lead current limit
90
A
340
A
75
A
SSOA
V_GE = 15 V, T_VJ = 150°C, R_G = 20 Ω
(RBSOA) Clamped inductive load, V < 270 V
CE
I_CM = 90
A
P_C
T_C = 25°C
150
W
T_J
-55 ... +150 °C
T_JM
150
°C
T_stg
-55 ... +150 °C
T_L
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
T_SOLD
Maximum plastic body temperature for 10 S 260
°C
M_d
Weight
Mounting torque
1.3/10
5.5
Nm/lb.in.
g
G
C
E
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard package
• Low V_CE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
Applications
• PDP Screen Drivers
Symbol Test Conditions
(T = 25°C unless otherwise specified)
J
Characteristic Values
Min. Typ. Max.
V
GE(th)
I = 1 mA, V = V
C
CE
GE
3.0
5.5 V
I_CES
V_CE = 270 V
V_GE = 0 V
T_J = 125°C
1 μA
200 μA
I_GES
V_CE = 0 V, V_GE = ±20 V
±100 nA
V_CE(sat)
V_GE = 15V,
Note 1
I_C = 50 A
T_J = 125°C
I_C = 100 A
T_J = 125°C
1.3 2.1 V
1.3
V
1.67
V
1.80
V
© 2006 IXYS All rights reserved
DS99609B(02/07)