IXGQ85N33PCD1 Datasheet, PDF (1/5 Pages) IXYS Corporation – Advance Technical Information PolarTM High Speed IGBT with Anti-Parallel Diode

Advance Technical Information
Polar^TM High Speed
IGBT
with Anti-Parallel Diode
for PDP Sustain Circuit
IXGQ85N33PCD1
V_CES =
I_CP
=
V_CE(sat) ≤
330 V
340 A
2.1 V
Symbol
V
CES
Test Conditions
T_J = 25°C to 150°C
V_GEM
I_C25
I_CP
I_DP
I_C(RMS)
SSOA
(RBSOA)
T_C = 25°C, IGBT chip capability
T_J ≤ 150°C, tp ≤ 1 μs, D ≤ 1%
T_J ≤ 150°C, tp < 10 μs
Lead current limit
V_GE = 15 V, T_VJ = 150°C, R_G = 20 Ω
Clamped inductive load, V_CE < 300 V
P_C
T_C = 25°C
T_J
T_JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body
M_d
Mounting torque
Weight
Maximum Ratings
330
V
TO-3P
±30
V
85
340
40
A
GC
A
E
(TAB)
G = Gate
C = Collector
A E = Emitter TAb = Collector
75
A
I_CM = 96
A
150
W
-55 ... +150 °C
150
°C
-55 ... +150 °C
300
°C
Features
• International standard package
• Fast tfi for minimum turn off
switching losses
• MOS Gate turn-on
- drive simplicity
• Positive dVsat/dt for
paralleling
260
1.3/10 Nm/lb.in. _≤
5.5
g
Symbol Test Conditions
(T_J = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
V
GE(th)
I_C = 1 mA, V_CE = V_GE
3.0
6.0 V
I_CES
V_CE = 330 V
V_GE = 0 V
T_J = 125°C
1 μA
200 μA
I_GES
V_CE = 0 V, V_GE = ±20 V
±100 nA
V_CE(sat)
V_GE = 15V,
Note 1
I_C = 50 A
T_J = 125°C
I_C = 100 A
T_J = 125°C
1.43 2.1 V
1.47
V
1.85 3.0 V
2.0
V
© 2006 IXYS CORPORATION, All rights reserved
DS99610D(02/07)