IXGQ28N120B Datasheet, PDF (1/6 Pages) IXYS Corporation – High Voltage IGBT with Diode

High Voltage IGBT with Diode
IXGQ 28N120B
IXGQ 28N120BD1
V
CES
I_C25
V_CE(sat)
t_fi(typ)
= 1200 V
= 50 A
= 3.5 V
= 160 ns
Symbol
Test Conditions
V_CES
V_CGR
V
GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1 ms
V
GE
=
15
V,
T
J
=
125°C,
R
G
=
10
Ω
Clamped inductive load
P_C
T_C = 25°C
T_J
T_JM
T_stg
M
Mounting torque
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
D1
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
50
A
28
A
150
A
I = 60
A
CM
@0.8 V_CES
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
300
°C
6
g
TO-3P (IXGQ)
G
CE
G = Gate
E = Emitter
(TAB)
C = Collector
TAB = Collector
Features
z _{International standard package}
z _{IGBT and anti-parallel FRED for}
resonant power supplies
- Induction heating
- Rice cookers
z _{MOS Gate turn-on}
- drive simplicity
z _{Fast Recovery Expitaxial Diode (FRED)}
- soft recovery with low I
RM
Symbol
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 250 µA, V_CE = V_GE
2.5
5.0 V
V_CE = V_CES
V_GE = 0 V
T_J = 25°C
28N120B
28N120BD1
25 µA
50 µA
V_CE = 0 V, V_GE = ±20 V
±100 nA
I_C = 28A, V_GE = 15 V
Note 2
T=125°C
2.9 3.5 V
2.8
Advantages
z _{Saves space (two devices in one}
package)
z _{Easy to mount with 1 screw}
(isolated mounting screw hole)
z _{Reduces assembly time and cost}
© 2003 IXYS All rights reserved
DS99135(12/03)