IXGQ20N120B Datasheet, PDF (1/6 Pages) IXYS Corporation – High Voltage IGBT with Diode

High Voltage IGBT with Diode
IXGQ 20N120B
IXGQ 20N120BD1
V_CES
I_C25
V_CE(sat)
t_fi(typ)
= 1200 V
= 40 A
= 3.4 V
= 160 ns
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_J = 125°C, R_G = 10 Ω
Clamped inductive load
P_C
T_C = 25°C
T_J
T_JM
T_stg
M_d
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
BD1
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
40
A
20
A
100
A
I_CM = 40
A
@0.8 V_CES
190
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
300
°C
6
g
TO-3P (IXGQ)
G
CE
(TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{International standard package}
z _{IGBT and anti-parallel FRED for}
resonant power supplies
- Induction heating
- Rice cookers
z _{MOS Gate turn-on}
- drive simplicity
z _{Fast Recovery Expitaxial Diode (FRED)}
- soft recovery with low I_RM
Symbol
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250 µA, V_CE = V_GE
V_CE = V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = 20A_, V_GE = 15 V
Note 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
2.5
20N120B
20N120BD1
5.0 V
25 µA
50 µA
T_J=125°C
±100 nA
2.9 3.4 V
2.8
V
Advantages
z _{Saves space (two devices in one}
package)
z _{Easy to mount with 1 screw}
(isolated mounting screw hole)
z _{Reduces assembly time and cost}
© 2003 IXYS All rights reserved
DS99136(12/03)