IXGP12N60U1 Datasheet, PDF (1/6 Pages) IXYS Corporation – Low VCE(sat) IGBT with Diode Combi Pack

Preliminary data
Low V_CE(sat)
IGBT with Diode
Combi Pack
IXGP12N60U1
V_CES
I_C
V_CE(sat)
= 600 V
= 24 A
= 2.5 V
Symbol
Test Conditions
V_CES
V_CGR
V
GES
V_GEM
I
C25
I_C90
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T
C
= 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V=
GE
15
V,
T
VJ
=
125°C,
R
G
=
150
Ω
Clamped inductive load, L = 300 µH
P_C
T_C = 25°C
T
J
T_JM
T_stg
M
Mounting torque with screw M3
d
Mounting torque with screw M3.5
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
24
A
12
A
48
A
I = 20
A
CM
@ 0.8 V_CES
100
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
4
g
300
°C
TO-220 AB
GCE
G = Gate,
C = Collector,
E = Emitter, TAB = Collector
Features
l _{International standard package}
JEDEC TO-220 AB
l _{IGBT with antiparallel FRED in one}
package
l _{2nd generation HDMOS}TM _process
l _{Low V}
CE(sat)
- for minimum on-state conduction
losses
l _{MOS Gate turn-on}
- drive simplicity
l _{Fast Recovery Epitaxial Diode FRED)}
- soft recovery with low I_RM
Symbol
BV
CES
V_GE(th)
I_CES
I
GES
V
CE(sat)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I
C
=
750
µA,
V
GE
=
0
V
600
I_C = 250 µA, V_GE = V_GE
2.5
V_CE = 0.8 • V_CES
V =0V
GE
T_J = 25°C
T
J
=
125°C
V
CE
=
0
V,
V
GE
=
±20
V
I = I , V = 15 V
C
CE90 GE
V
5.5 V
250 µA
2.5 mA
±100 nA
2.5 V
Applications
l _{AC motor speed control}
l _{DC servo and robot drives}
l _{DC choppers}
l _{Uninterruptible power supplies (UPS)}
l _{Switch-mode and resonant-mode}
power supplies
Advantages
l _{Easy to mount with 1 screw}
l _{Space savings (two devices in one}
package)
l _{Reduces assembly time and cost}
l _{High power density}
© 1996 IXYS All rights reserved
92792D (9/96)