IXGP12N100U1 Datasheet, PDF (1/4 Pages) IXYS Corporation – IGBT - Combi Pack

IGBT
Combi Pack
IXGA/IXGP12N100U1
IXGA/IXGP12N100AU1
V
CES
1000 V
1000 V
I
C25
24 A
24 A
V
CE(sat)
3.5 V
4.0 V
Preliminary Data Sheet
Symbol
Test Conditions
V
CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V
GE
=
15
V,
T
VJ
=
125°C,
R
G
=
150
W
Clamped inductive load, L = 300 mH
P
C
T
C
= 25°C
T_J
T_JM
T_stg
M_d
Mounting torque with screw M3
Mounting torque with screw M3.5
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
24
A
12
A
48
A
I = 24
A
CM
@ 0.8 V
CES
100
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
4
g
300
°C
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
BV_CES
V_GE(th)
I_C = 3 mA, V_GE = 0 V
I_C = 250 mA, V_GE = V_GE
I_CES
V_CE = 0.8, V_CES
V_GE= 0 V
I_GES
V_CE = 0 V, V_GE = ±20 V
V_CE(sat)
I_C = I_CE90, V_GE = 15
Characteristic Values
Min. Typ. Max.
1000
2.5
V
5.5 V
T_J = 25°C
T_J = 125°C
300 mA
3 mA
±100 nA
12N100
12N100A
3.5 V
4.0 V
TO-220AB(IXGP)
GCE
TO-263 AA (IXGA)
G
E
C (TAB)
Features
• International standard packages
JEDEC TO-220AB and TO-263AA
• IGBT with antiparallel FRED in one
package
• Second generation HDMOS^TM process
• Low V
CE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I_RM
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with one screw
• Space savings (two devices in one
package)
• Reduces assembly time and cost
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95592A (3/97)
1-4