IXGN82N120C3H1 Datasheet, PDF (1/2 Pages) IXYS Corporation – Advance Technical Information

GenX3^TM 1200V
IGBT w/ Diode
High-Speed PT IGBT for
20-50 kHz Switching
Advance Technical Information
IXGN82N120C3H1
V_CES
I_C110
V_CE(sat)
= 1200V
= 58A
≤£ 3.9V
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE= 15V, T_VJ = 125°C, R_G = 3Ω
Clamped Inductive Load
T_C = 25°C
50/60Hz
I_ISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
130
A
58
A
42
A
500
A
I_CM = 164
A
V_CE ≤ V_CES
595
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_C = 1mA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V, Note 1
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ± 20V
V_CE(sat)
I_C = 82A, V_GE = 15V, Note 2
Characteristic Values
Min. Typ. Max.
3.0
5.0 V
50 μA
6 mA
±200 nA
3.3 3.9 V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{High Current Capability}
z _{Isolation Voltage 2500 V~}
z _{Anti-Parallel Ultra Fast Diode}
z _{International Standard Package}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _SMPS
z _{PFC Circuits}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2009 IXYS CORPORATION, All Rights Reserved
DS100171(7/09)