IXGN60N60C2 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFASTTM IGBTs with Diode

HiPerFAST^TM IGBTs
with Diode
IXGN60N60C2
IXGN60N60C2D1
C2-Class High Speed IGBTs
V_CES =
I_C110 =
V_CE(sat) ≤
t_rr
=
600V
60A
2.5V
35ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C (Limited by Leads)
T_C = 110°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped Inductive Load
T_C = 25°C
50/60 Hz
I_ISOL ≤ 1 mA
t = 1 min
t=1s
Mounting Torque
Terminal Connection Torque (M4)
E
60C2
E
60C2D1
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
60
A
300
A
I_CM = 100
A
@ V_CE ≤ 600
V
480
W
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_CES
I_GES
V_CE(sat)
I_C = 250μA, V_CE = V_GE
V_CE = V_CES
V_GE = 0V
T_J = 125°C
V_CE = 0V, V_GE = ±20V
I_C = 50A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
3.0
5.0 V
650 μA
5 mA
±100 nA
2.1 2.5 V
1.8
V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c Either Emitter Terminal can be used as
Main or Kelvin Emitter
Features
z _{International Standard Package}
miniBLOC
z _{Aluminium Nitride Isolation}
- High Power Dissipation
z _{Anti-Parallel Ultra Fast Diode}
z _{Isolation Voltage 3000 V~}
z _{Low VCE(sat) for Minimum On-State}
Conduction Losses
z _{MOS Gate Turn-on}
- Drive Simplicity
z _{Low Collector-to-Case Capacitance}
(< 50 pF)
z _{Low Package Inductance (< 5 nH)}
- Easy to Drive and to Protect
Applications
z _{AC Motor Speed Control}
z _{DC Servo and Robot Drives}
z _{DC Choppers}
z _{Uninterruptible Power Supplies (UPS)}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
Advantages
z _{Easy to Mount with 2 Screws}
z _{Space Savings}
z _{High Power Density}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99177A(01/09)