IXGN60N60 Datasheet, PDF (1/2 Pages) IXYS Corporation – Ultra-Low VCE(sat) IGBT

Ultra-Low V_CE(sat) IGBT
IXGN 60N60
V_CES = 600 V
I_C25 = 100 A
V_CE(sat) = 1.7 V
Preliminary data sheet
Symbol
Test Conditions
V_CES
V
CGR
V_GES
V_GEM
I
C25
I_C90
I
CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MW
Continuous
Transient
T
C
= 25°C
T_C = 90°C
T
C
= 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 10 W
Clamped inductive load, L = 30 mH
P_C
T_C = 25°C
T_J
T
JM
T_stg
M
Mounting torque
d
Terminal connection torque (M4)
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
E
Maximum Ratings
600
V
600
V
±20
V
±30
V
100
A
60
A
200
A
I_CM = 100
A
@ 0.8 V
CES
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
300
°C
SOT-227B miniBLOC
Ex
G
Ex
C
G = Gate, C = Collector, E = Emitter
x Either emitter terminal can be used
as Main or Kelvin Emitter
Features
q _{International standard package}
SOT-227B
q _{Aluminium nitride isolation}
- high power dissipation
q _{Isolation voltage 3000 V~}
q _{Very high current, fast switching}
IGBT
q _{Low V for minimum on-state}
CE(sat)
conduction losses
q _{MOS Gate turn-on drive simplicity}
q _{Low collector-to-case capacitance}
(< 50 pF)
q _{Low package inductance (< 5 nH)}
- easy to drive and to protect
Symbol
BV
CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I
C
=
250
mA,
V
GE
=
0
V
I_C = 250 mA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T_J = 25°C
T_J = 125°C
V
5V
200 mA
1 mA
±100 nA
1.7 V
Applications
q _{AC motor speed control}
q _{DC servo and robot drives}
q _{DC choppers}
q _{Uninterruptible power supplies (UPS)}
q _{Switch-mode and resonant-mode}
power supplies
Advantages
q _{Easy to mount with 2 screws}
q _{Space savings}
q _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97521E (7/00)
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