IXGN50N60BD2 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFAST IGBT with HiPerFRED

HiPerFAST^TM IGBT
with HiPerFRED
Buck & boost configurations
IXGN 50N60BD2
IXGN 50N60BD3
V_CES
I_C25
V_CE(sat)
t_fi
= 600 V
= 75 A
= 2.5 V
= 150 ns
...BD2
...BD3
Symbol Test Conditions
V
CES
V_CGR
T
J
=
25°C
to
150°C
T_J = 25°C to 150°C; R_GE = 1 MW
V_GES
V
GEM
Continuous
Transient
I_C25
T_C = 25°C
I_C90
T_C = 90°C
I_CM
T_C = 25°C, 1 ms
SSOA
V_GE= 15 V, T_VJ = 125°C, R_G = 10 W
(RBSOA) Clamped inductive load, L = 30 mH
P_C
V_RRM
I_FAVM
I_FRM
P_D
T_J
T
JM
T_stg
M
d
T_C = 25°C
T_C = 70°C; rectangular, d = 50%
t_P z<10 ms; pulse width limited by T_J
T_C = 25°C
Mounting torque
Terminal connection torque (M4)
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
50
A
200
A
I_CM = 100
A
@ 0.8 V_CES
250
W
600
V
60
A
600
A
150
W
-40 ... +150
°C
150
°C
-40 ... +150
°C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
300
°C
Symbol
BV_CES
V_GE(th)
I
CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250 mA, V_GE = 0 V
I_C = 250 mA, V_CE = V_GE
V = 0.8 • V
CE
CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
600
2.5
T
J
=
25°C
T_J = 125°C
V
5V
200 mA
1 mA
±100 nA
2.5 V
SOT-227B, miniBLOC
E 153432
1
2
4
3
IXGN50N60BD2
1 = Emitter; 2 = Gate
3 = Collector; 4 = Diode cathode
IXGN50N60BD3
1 = Emitter/Diode Cathode; 2 = Gate
3 = Collector; 4 = Diode anode
Features
• International standard package
miniBLOC
• Aluminium nitride isolation
- high power dissipation
• Isolation voltage 3000 V~
• Very high current, fast switching
IGBT & FRED diode
• MOS Gate turn-on
- drive simplicity
• Low collector-to-case capacitance
• Low package inductance (< 10 nH)
- easy to drive and to protect
• Molding epoxies meet UL 94V-0
flammability classification
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Buck converters
Advantages
• Easy to mount with 2 screws
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98502C (8/99)
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