IXGN50N60B Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFASTTM IGBT

HiPerFAST^TM IGBT
IXGN 50N60B
V_CES = 600 V
I_C25 = 75 A
V_CE(sat) = 2.5 V
Preliminary data sheet
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V
GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 10 W
Clamped inductive load, L = 30 mH
P
C
T
C
= 25°C
T_J
T_JM
T_stg
M_d
Mounting torque
Terminal connection torque (M4)
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
E
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
50
A
200
A
I_CM = 100
A
@ 0.8 V_CES
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
300
°C
SOT-227B miniBLOC
Ex
G
Ex
C
G = Gate, C = Collector, E = Emitter
x Either emitter terminal can be used
as Main or Kelvin Emitter
Features
• International standard package
SOT-227B
• Aluminiumnitrideisolation
- high power dissipation
• Isolation voltage 3000 V~
• Very high current, fast switching IGBT
• Low V_CE(sat) for minimum on-state
conduction losses
• MOS Gate turn-on drive simplicity
• Low collector-to-case capacitance
(< 50 pF)
• Low package inductance (< 5 nH)
- easy to drive and to protect
Symbol
BV_CES
V_GE(th)
I_CES
I
GES
V_CE(sat)
Test Conditions
I_C = 250 mA, V_GE = 0 V
I_C = 250 mA, V_CE = V_GE
V_CE = 0.8 • V_CES
V_GE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T_J = 125°C
V
5V
200 mA
1 mA
±100 nA
2.5 V
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 2 screws
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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