IXGN50N120C3H1 Datasheet, PDF (1/6 Pages) IXYS Corporation – High-Speed PT IGBT for 20-50 kHz Switching

GenX3^TM 1200V
IGBT w/ Diode
High-Speed PT IGBT for
20-50 kHz Switching
Advance Technical Information
IXGN50N120C3H1
V_CES
I_C110
V_CE(sat)
= 1200V
= 50A
≤£ 4.2V
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE= 15V, T_VJ = 125°C, R_G = 2Ω
Clamped Inductive Load
T_C = 25°C
50/60Hz
I_ISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
95
A
50
A
58
A
240
A
I_CM = 100
A
V_CE ≤ V_CES
460
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE= 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 40A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
3.0
5.0 V
250 μA
14 mA
±100 nA
4.2 V
2.6
V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{High Current Capability}
z _{Isolation Voltage 2500V~}
z _{Anti-Parallel Ultra Fast Diode}
z _{International Standard Package}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _SMPS
z _{PFC Circuits}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2010 IXYS CORPORATION, All Rights Reserved
DS100246(03/10)