IXGN400N30A3 Datasheet, PDF (1/5 Pages) IXYS Corporation – Ultra-Low-Vsat PT IGBT for up to 10kHz Switching

GenX3^TM 300V IGBT
IXGN400N30A3
Ultra-Low-Vsat PT IGBT for
up to 10kHz Switching
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_LRMS
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (Chip Capability)
T_C = 110°C
Terminal Current Limit
T_C = 25°C, 1ms
V_GE= 15V, T_VJ = 125°C, R_G = 1Ω
Clamped Inductive Load
T_C = 25°C
50/60Hz
I_ISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque (M4)
E
Maximum Ratings
300
V
300
V
±20
V
±30
V
400
A
200
A
200
A
1200
A
I_CM = 400
A
@ 0.8 • V_CES
V
735
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 1mA, V_GE = 0V
V_GE(th)
I_C = 4mA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
I_GES
V_CE = 0V, V_GE = ±20V
T_J = 125°C
V_CE(sat)
I_C = 100A, V_GE = 15V, Note 1
I_C = 400A
Characteristic Values
Min. Typ. Max.
300
V
3.0
5.0 V
50 μA
2 mA
±400 nA
1.15 V
1.70
V
V_CES =
I_C25 =
V_CE(sat) ≤
300V
400A
1.15V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
cEither Emitter Terminal Can Be Used
as Main or Kelvin Emitter
Features
z _{Optimized for Low Conduction Losses}
z _{High Current Capability}
z _{International Standard Package}
z _{miniBLOC, with Aluminium Nitride}
Isolation
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
z _{Inrush Current Protection Circuits}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99592B(7/09)