IXGN200N60B Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFASTTM IGBT

Advanced Technical Information
HiPerFAST^TM IGBT
IXGN 200N60B
V_CES
I_C25
V_CE(sat)
= 600 V
= 200 A
= 2.1 V
E
Symbol
Test Conditions
V_CES
T_J
V
T
CGR
J
V_GES
V_GEM
I
C25
I_C90
I
CM
SSOA
(RBSOA)
= 25°C to 150°C
=
25°C
to
150°C;
R
GE
=
1
MW
Continuous
Transient
T
C
= 25°C
T_C = 90°C
T
C
= 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 2.4 W
Clamped inductive load, L = 30 mH
P_C
T_J
T
JM
T_stg
V_ISOL
M_d
T_C = 25°C
50/60 Hz
I
ISOL
£
1
mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
Weight
Maximum Ratings
600
V
600
V
±20
V
±30
V
200
A
120
A
400
A
I_CM = 200
A
@ 0.8 V
CES
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
BV
CES
V_GE(th)
I
CES
I_GES
V_CE(sat)
Test Conditions
I = 1 mA , V = 0 V
C
GE
I_C = 1 mA, V_CE = V_GE
V =V
CE
CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T=
J
25°C
T_J = 125°C
V
5.5 V
200 mA
2 mA
±400 nA
2.1 V
SOT-227B, miniBLOC
E
G
E
C
G = Gate, C = Collector, E = Emitter
 either emitter terminal can be used as
Main or Kelvin Emitter
Features
• International standard package
miniBLOC
• Aluminium nitride isolation
- high power dissipation
• Isolation voltage 3000 V~
• Very high current, fast switching IGBT
• Low V
CE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Low collector-to-case capacitance
(< 50 pF)
• Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 2 screws
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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