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IXGN200N60 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFAST IGBT
HiPerFASTTM IGBT
IXGN 200N60
IXGN 200N60A
VCES
600 V
600 V
I V C25
CE(sat)
200 A 2.5 V
200 A 2.7 V
E
Symbol
VCES
VCGR
VGES
V
GEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
T
J
TJM
Tstg
V
ISOL
Md
Weight
Symbol
BVCES
V
GE(th)
ICES
I
GES
V
CE(sat)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
TC = 25°C
50/60 Hz
IISOL £ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
Maximum Ratings
600
V
600
V
±20
V
±30
V
200
A
100
A
300
A
ICM = 100
A
@ 0.8 VCES
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Test Conditions
IC = 250 mA, VGE = 0 V
I = 10 mA, V = V
C
CE
GE
VCE = 0.8 • VCES
VGE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
I = I , V = 15 V
C
C90 GE
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600
2.5
TJ = 25°C
TJ = 125°C
200N60
200N60A
V
6V
200 mA
2 mA
±400 nA
2.5 V
2.7 V
SOT-227B, miniBLOC
E
G
E
C
G = Gate, C = Collector, E = Emitter
 either emitter terminal can be used as
Main or Kelvin Emitter
Features
q International standard package
miniBLOC (ISOTOP compatible)
q Aluminium nitride isolation
- high power dissipation
q Isolation voltage 3000 V~
q Very high current, fast switching IGBT
q Low VCE(sat)
- for minimum on-state conduction
losses
q MOS Gate turn-on
- drive simplicity
q Low collector-to-case capacitance
(< 50 pF)
q Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
q AC motor speed control
q DC servo and robot drives
q DC choppers
q Uninterruptible power supplies (UPS)
q Switch-mode and resonant-mode
power supplies
Advantages
q Easy to mount with 2 screws
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92776I (1/98)
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