IXGM30N60 Datasheet, PDF (1/2 Pages) IXYS Corporation – Low VCE(sat) IGBT, High speed IGBT

Low V_CE(sat) IGBT
High speed IGBT
IXGH/IXGM 30 N60
IXGH/IXGM 30 N60A
V_CES
600 V
600 V
I_C25
50 A
50 A
V_CE(sat)
2.5 V
3.0 V
Symbol
Test Conditions
Maximum Ratings
V_CES
V
CGR
V_GES
V
GEM
I_C25
I_C90
I
CM
SSOA
(RBSOA)
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T
C
= 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 33 Ω
Clamped inductive load, L = 100 µH
P
C
T_J
T_JM
T
stg
M_d
Weight
T
C
= 25°C
Mounting torque (M3)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
600
V
600
V
±20
V
±30
V
50
A
30
A
100
A
I_CM = 60
A
@ 0.8 V_CES
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300
°C
Symbol
BV
CES
V_GE(th)
I_CES
I
GES
V
CE(sat)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I
C
=
250
µA,
V
GE
=
0
V
600
I_C = 250 µA, V_CE = V_GE
2.5
V_CE = 0.8 • V_CES
V =0V
GE
T_J = 25°C
T
J
=
125°C
V
CE
=
0
V,
V
GE
=
±20
V
I = I , V = 15 V
C
C90 GE
30N60
30N60A
V
5V
200 µA
1 mA
±100 nA
2.5 V
3.0 V
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
G = Gate,
E = Emitter,
C
C = Collector,
TAB = Collector
Features
l _{International standard packages}
l _{2nd generation HDMOS}TM _process
l _{Low V}
CE(sat)
- for low on-state conduction losses
l _{High current handling capability}
l _{MOS Gate turn-on}
- drive simplicity
l _{Voltage rating guaranteed at high}
temperature (125°C)
Applications
l _{AC motor speed control}
l _{DC servo and robot drives}
l _{DC choppers}
l _{Uninterruptible power supplies (UPS)}
l _{Switch-mode and resonant-mode}
power supplies
Advantages
l _{Easy to mount with 1 screw (TO-247)}
(isolated mounting screw hole)
l _{High power density}
© 1996 IXYS All rights reserved
91512E (3/96)