IXGM25N100 Datasheet, PDF (1/4 Pages) IXYS Corporation – Low VCE(sat), High speed IGBT

Low V_CE(sat)
High speed IGBT
V_CES
IXGH/IXGM 25 N100 1000 V
IXGH/IXGM 25 N100A 1000 V
I_C25
50 A
50 A
V_CE(sat)
3.5 V
4.0 V
Symbol
Test Conditions
Maximum Ratings TO-247 AD (IXGH)
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
1000
V
1000
V
±20
V
±30
V
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE= 15 V, T_VJ = 125°C, R_G = 33 Ω
Clamped inductive load, L = 100 µH
T_C = 25°C
50
A
25
A
100
A
I_CM = 50
A
@ 0.8 V
CES
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Symbol
BV_CES
V
GE(th)
I
CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 3 mA, V_GE = 0 V
I
C
=
250
µA,
V
CE
=
V
GE
V = 0.8 • V
CE
CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
T
J
=
25°C
T_J = 125°C
25N100
25N100A
1000
2.5
V
5V
250 µA
1 mA
±100 nA
3.5 V
4.0 V
G
C
E
TO-204 AE (IXGM)
G = Gate,
E = Emitter,
C
C = Collector,
TAB = Collector
Features
l _{International standard packages}
l _{2nd generation HDMOS}TM _process
l _{Low V}
CE(sat)
- for low on-state conduction losses
l _{High current handling capability}
l _{MOS Gate turn-on}
- drive simplicity
l _{Voltage rating guaranteed at high}
temperature (125°C)
Applications
l _{AC motor speed control}
l _{DC servo and robot drives}
l _{DC choppers}
l _{Uninterruptible power supplies (UPS)}
l _{Switch-mode and resonant-mode}
power supplies
Advantages
l _{Easy to mount with 1 screw (TO-247)}
(isolated mounting screw hole)
l _{High power density}
© 1996 IXYS All rights reserved
91516E (3/96)