IXGL200N60B3 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 600V IGBT

GenX3^TM 600V IGBT
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
IXGL200N60B3
V_CES = 600V
I_C110 = 90A
V_CE(sat) ≤ 1.50V
t_fi(typ) = 183ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I
C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (limited by leads)
T_C = 110°C (chip capability)
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 1Ω
Clamped inductive load @ V_CE ≤ 600V
T_C = 25°C
Maximum lead temperature for soldering
Plastic body for 10s
50/60Hz, RMS, 1 minute
I_ISOL ≤ 1mA
t = 1s
Mounting force
Maximum Ratings
600
V
600
V
±20
V
±30
V
150
A
90
A
600
A
I_CM = 300
A
400
-55 ... +150
150
-55 ... +150
300
260
2500
3000
20..120/4.5..27
8
W
°C
°C
°C
°C
°C
V~
V~
N/lb.
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV
CES
V_GE(th)
I_C = 250μA, V_GE = 0V
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES
V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 100A, V_GE = 15V, Note 1
I_C = 200A
T_J = 125°C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
200 μA
2 mA
±100 nA
1.35
1.65
1.75
1.50 V
V
V
GCCE E
G = Gate
C = Collector
E = Emitter
Features
z _{Silocon chip on Direct-Copper Bond}
(DCB) substrate
z _{Isolated mounting surface}
z _{Square RBSOA}
z _{High current handling capability}
z _{2500V electrical isolation}
Advantages
z _{High power density}
z _{Low gate drive requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2008 IXYS CORPORATION, All rights reserved
DS99917B(05/08)