IXGK75N250 Datasheet, PDF (1/5 Pages) IXYS Corporation – For Capacitor Discharge Applications

Preliminary Technical Information
High Voltage IGBTs
For Capacitor Discharge
Applications
IXGK75N250
IXGX75N250
V_CES =
I_C110 =
V_CE(sat) ≤
2500V
75A
2.7V
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_LRMS
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
2500
V
2500
V
±20
V
±30
V
T_C = 25°C ( Chip Capability )
T_C = 110°C
T_C = 25°C (Lead RMS Limit)
T_C = 25°C, V_GE = 20V, 1ms
V_GE= 15V, T_VJ = 125°C, R_G = 1Ω
Clamped Inductive Load
T_C = 25°C
170
A
75
A
160
A
530
A
I_CM = 200
A
@ 0.8 • V_CES
780
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
°C
260
°C
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 1mA, V_CE = 0V
V_GE(th)
I_C = 4mA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 75A, V_GE = 15V, Note 1
I_C = 150A
Characteristic Values
Min. Typ. Max.
2500
V
3.0
5.0 V
50 μA
5 mA
±200 nA
2.7 V
3.6 V
TO-264 (IXGK)
G
C
E
Tab
PLUS247^TM (IXGX)
G
C
Tab
E
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
Very High Peak Current Capability
Low Saturation Voltage
MOS Gate Turn-On
Rugged NPT Structure
Molding Epoxies meet UL 94V-0
Flammability Classification
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Capacitor Discharge
Pulser Circuits
© 2010 IXYS CORPORATION, All Rights Reserved
DS99826B(07/10)