IXGK72N60B3H1 Datasheet, PDF (1/7 Pages) IXYS Corporation – GenX3 600V IGBT with Diode

Preliminary Technical Information
GenX3^TM 600V IGBT
with Diode
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
IXGK72N60B3H1
IXGX72N60B3H1
V_CES
I_C110
V_CE(sat)
t_fi(typ)
= 600V
= 72A
≤£ 1.8V
= 92ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
M_d
F_C
T_L
T_SOLD
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
Maximum Ratings
600
V
600
V
±20
V
±30
V
T_C = 25°C (limited by leads)
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 3Ω
Clamped inductive load @ V_CE ≤ 600V
T_C = 25°C
75
72
450
I_CM = 240
540
-55 ... +150
150
-55 ... +150
Mounting torque (TO-264)
Mounting force (PLUS247)
1.13 / 10
20..120 / 4.5..27
Maximum lead temperature for soldering
300
1.6mm (0.062 in.) from case for 10s
260
TO-264
10
PLUS247
6
A
A
A
A
W
°C
°C
°C
Nm/lb.in.
N/lb.
°C
°C
g
g
Symbol
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
I_C = 250μA, V_CE = V_GE
V_CE = V_CES
V_GE = 0V
T_J = 125°C
V_CE = 0V, V_GE = ±20V
I_C = 60A, V_GE = 15V, Note 1
I_C = 120A
3.0
5.0 V
300 μA
5 mA
±100 nA
1.50 1.80 V
1.75
TO-264 (IXGK)
G
C
E
PLUS247 (IXGX)
(TAB)
GG
CD _ES
TAB
G = Gate
C = Collector
E = Emitter TAB = Collector
Features
z _{Optimized for low conduction and}
switching losses
z _{Square RBSOA}
z _{Anti-parallel ultra fast diode}
z _{International standard packages}
Advantages
z _{High power density}
z _{Low gate drive requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2008 IXYS CORPORATION, All rights reserved
DS99869A(06/08)