IXGK72N60A3H1 Datasheet, PDF (1/7 Pages) IXYS Corporation – GenX3 600V IGBT w/Diode

Advance Technical Information
GenX3^TM 600V IGBT
w/Diode
Ultra-Low Vsat PT IGBTs for
up to 5kHz Switching
IXGK72N60A3H1
IXGX72N60A3H1
V_CES
I_C110
V_CE(sat)
t_fi(typ)
= 600V
= 72A
≤£ 1.35V
= 250ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
M_d
F_C
T_L
T_SOLD
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
Maximum Ratings
600
V
600
V
±20
V
±30
V
T_C = 25°C (Limited by Leads)
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 3Ω
Clamped Inductive Load
T_C = 25°C
75
A
72
A
68
A
400
A
I_CM = 150
A
@ V_CE ≤ 600
V
540
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13 / 10
20..120 / 4.5..27
Maximum Lead Temperature for Soldering
300
1.6mm (0.062 in.) from Case for 10s
260
TO-264
10
PLUS247
6
Nm/lb.in.
N/lb.
°C
°C
g
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 60A, V_GE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
3.0
5.0 V
300 μA
5 mA
±100 nA
1.35 V
TO-264 (IXGK)
G
C
E
PLUS247 (IXGX)
(TAB)
GG
CD _ES
(TAB)
G = Gate
C = Collector
E = Emitter TAB = Collector
Features
z _{Optimized for Low Conduction Losses}
z _{Square RBSOA}
z _{Anti-Parallel Ultra Fast Diode}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
z _{Inrush Current Protection Circuits}
© 2009 IXYS CORPORATION, All Rights Reserved
DS100144(04/09)