IXGK60N60C2D1 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFASTTM IGBT with Diode

Advance Technical Data
HiPerFAST^TM
IGBT with Diode
IXGK 60N60C2D1
IXGX 60N60C2D1
C2-Class High Speed IGBTs
V_CES
I_C25
V_CE(sat)
t_fi(typ)
= 600 V
= 75 A
= 2.5 V
= 35 ns
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V_GEM
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
I_C25
T_C = 25°C (limited by leads)
I_C110
T_C = 110°C
I_CM
T_C = 25°C, 1 ms
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
M_d
Weight
V_GE = 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load @ V_CE ≤ 600 V
T_C = 25°C
Mounting torque, TO-264
TO-264
PLUS247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
60
A
300
A
I_CM = 100
A
480
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
10
g
6
g
300
°C
Symbol
Test Conditions
V_GE(th)
I_CES
I_GES
V_CE(sat)
I_C = 250 µA, V_CE = V_GE
V_CE = V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = 50 A, V_GE = 15 V
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0
5.0
V
T_J = 25°C
T_J = 125°C
650 µA
5 mA
±100 nA
T_J = 25°C
T_J = 125°C
2.1 2.5
V
1.8
V
TO-264 AA
(IXGK)
G
CE
PLUS247
(IXGX)
(TAB)
G = Gate
C = Collector
E = Emitter Tab = Collector
(TAB)
Features
• Very high frequency IGBT and
anti-parallel FRED in one package
• Square RBSOA
• High current handling capability
• MOS Gate turn-on for drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low I_RM
Applications
• Switch-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC choppers
• AC motor speed control
• DC servo and robot drives
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
© 2003 IXYS All rights reserved
DS99044A(09/03)