IXGK55N120A3H1 Datasheet, PDF (1/2 Pages) IXYS Corporation – GenX3 1200V IGBTs w/ Diode

GenX3^TM 1200V
IGBTs w/ Diode
Ultra-Low-Vsat PT IGBTs for
up to 3kHz Switching
Advance Technical Information
IXGK55N120A3H1
IXGX55N120A3H1
V_CES =
I_C110 =
V_CE(sat) ≤
1200V
55A
2.3V
TO-264 (IXGK)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_LRMS
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
1200
V
1200
V
±20
V
±30
V
T_C = 25°C ( Chip Capability )
T_C = 110°C
T_C = 25°C (Lead RMS Limit)
T_C = 25°C, 1ms
V_GE= 15V, T_VJ = 125°C, R_G = 3Ω
Clamped Inductive Load
T_C = 25°C
125
A
55
A
120
A
400
A
I_CM = 110
A
@ 0.8 • V_CES
460
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
°C
260
°C
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_C = 1mA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
Note 1, T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = I_C110, V_GE = 15V, Note 2
T_J = 125°C
Characteristic Values
Min. Typ. Max.
3.0
5.0 V
100 μA
2.0 mA
±100 nA
1.85 2.3 V
1.90
G
C
EE
Tab
PLUS247^TM (IXGX)
G
C
E
G = Gate
C = Collector
Tab
E = Emitter
Tab = Collector
Features
z _{Optimized for Low Conduction Losses}
z _{Anti-Parallel Ultra Fast Diode}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
z _{Inrush Current Protection Circuits}
© 2010 IXYS CORPORATION, All Rights Reserved
DS100227(01/10)