IXGK50N60BD1 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFAST IGBT with Diode

HiPerFAST^TM
IGBT with Diode
IXGK 50N60BD1
IXGX 50N60BD1
V_CES
I_C25
V_CE(sat)
t_fi
= 600 V
= 75 A
= 2.3 V
= 85 ns
Symbol
Test Conditions
V_CES
V_CGR
V_GES
V
GEM
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MW
Continuous
Transient
I
C25
T
C
= 25°C
I_C90
T_C = 90°C
I_CM
T_C = 25°C, 1 ms
SSOA
(RBSOA)
V
GE
=
15
V,
T
VJ
=
125°C,
R
G
=
10
W
Clamped inductive load, L = 30 mH
P_C
T_C = 25°C
T
J
T
JM
T
stg
M_d
Weight
Mounting torque, TO-247 AD
TO-264
TO-268
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
50
A
200
A
I = 100
A
CM
@ 0.8 V
CES
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
10
g
5
g
300
°C
TO-264 AA
(IXGK)
G
C
E
PLUS247
(IXGX)
(TAB)
G = Gate C = Collector
E = Emitter Tab = Collector
Features
• International standard packages
JEDEC TO-268 and PLUS247 (hole-
less TO-247)
• High frequency IGBT and antparallel
FRED in one package
• New generation HDMOS^TM process
• High current handling capability
• MOS Gate turn-on fordrive simplicity
• Fast Recovery Epitaxial Diode
(FRED) with soft recovery and low I_RM
Symbol
Test Conditions
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
I_C = 1 mA, V_GE = 0 V
I_C = 500 mA, V_CE = V_GE
V_CE = V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
500
V
2.5
T_J = 25°C
T_J = 125°C
5.5 V
650 mA
5 mA
±100 nA
2.3 V
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices on one
package
• Easy to mount with 1 screw
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98516B (7/00)
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