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| IXGK50N60A2D1 Datasheet, PDF (1/6 Pages) IXYS Corporation – IGBT with Diode | |||
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Advance Technical Data
IGBT with Diode
IXGK 50N60A2D1
IXGX 50N60A2D1
VCES
IC25
VCE(sat)
= 600 V
= 75 A
= 1.4 V
Low Saturation Voltage
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 Mâ¦
Continuous
Transient
IC25
TC = 25°C (limited by leads)
IC110
TC = 110°C
IF110
TC = 110°C (50N60B2D1 Diode)
ICM
TC = 25°C, 1 ms
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
Weight
VGE = 15 V, TVJ = 125°C, RG = 10 â¦
Clamped inductive load @ VCE ⤠600 V
TC = 25°C
Mounting torque, TO-264
TO-264
PLUS247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
50
A
38
A
200
A
ICM = 80
A
TO-264
(IXGK)
G
C
E
PLUS247
(IXGX)
(TAB)
G = Gate
E = Emitter
C
E
C = Collector
Tab = Collector
(TAB)
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
10
g
6
g
300
°C
Features
⢠Low on-state voltage IGBT and
anti-parallel diode in one package
⢠High current handling capability
⢠MOS Gate turn-on for drive simplicity
Applications
⢠Lighting controls
⢠Heating controls
⢠AC/DC relays
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 50 A, VGE = 15 V
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0
5.0
V
TJ = 25°C
TJ = 125°C
600 µA
5 mA
±100 nA
TJ = 125°C
1.1 1.4
V
V
Advantages
⢠Space savings (two devices in one
package)
⢠Easy to mount with 1 screw or spring
clip
© 2004 IXYS All rights reserved
DS99275(12/04)
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