IXGK50N120C3H1 Datasheet, PDF (1/6 Pages) IXYS Corporation – GenX3 1200V IGBTs w/ Diode

Advance Technical Information
GenX3^TM 1200V IGBTs
w/ Diode
High-Speed PT IGBTs
for 20 - 50 kHz Switching
IXGK50N120C3H1
IXGX50N120C3H1
V_CES =
I_C100 =
V_CE(sat) ≤
t_fi(typ) =
1200V
50A
4.2V
64ns
TO-264 (IXGK)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C100
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C ( Chip Capability )
T_C = 100°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE= 15V, T_J = 125°C, R_G = 3Ω
Clamped Inductive Load
T_C = 25°C
1200
V
1200
V
±20
V
±30
V
95
A
50
A
240
A
40
A
750
mJ
I_CM = 100
A
V_CE ≤ V_CES
460
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062 in.) from Case for 10
260
°C
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
1.13/10
20..120/4.5..14.6
Nm/lb.in.
N/lb.
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE= 0V
T_J = 125°C, Note 1
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 40A, V_GE = 15V, Note 2
T_J = 125°C
Characteristic Values
Min. Typ. Max.
3.0
5.0 V
250 μA
14 mA
±100 nA
4.2 V
2.6
V
G
C
EE
PLUS247^TM (IXGX)
(TAB)
G
C
E
G = Gate
C = Collector
(TAB)
E = Emitter
TAB = Collector
Features
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{High Avalanche Capability}
z _{Anti-Parallel Ultra Fast Diode}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2009 IXYS CORPORATION, All Rights Reserved
DS100163(06/09)